technical data pnp sw itching silicon transistor qualified per m il - prf - 1 9 5 0 0 / 3 9 6 devices qualified level 2n3762 2n3762l 2n3763 2n3763l 2n3764 2n3765 jan jantx jantxv maximum ratings ratings symbol 2n3762* 2n3764 2n3763* 2n3765 unit collect or - emitter voltage v ceo 40 60 vdc collector - base voltage v cbo 40 60 vdc emitter - base voltage v ebo 5.0 vdc collector current i c 1.5 adc 2n3762* 1 2n3763* 2n3764 2 2n3765 total power dissipation @ t a = +25 0 c p t 1.0 0.5 w operating & storage jun ction temp. range t op , t stg - 55 to +200 0 c thermal characteristics characteristics symbol max. unit 2n3762* 2n3763* 2n3764 2n3765 thermal resistance junction - to - case r q jc 60 88 0 c/w *electrical characteristics for ?l? suffix devices are identical to the ?non l? corresponding devices 1) derate linearly at 5.71 mw/ 0 c for t a > +25 0 c 2) derate linearly at 2.86 mw/ 0 c for t a > +25 0 c to - 39* (to - 205ad) 2n3762, 2n3763 to - 5* 2n3762l, 2n3763l to - 46* (to - 206ab) 2n3764, 2n3765 *see appendix a for pa ckage outline electrical characteristics (t a = 25 0 c unless otherwise noted) characteristics symbol min. max. unit off characteristics collector - emitter breakdown current i c = 10 madc 2n3762, 2n3764 2n3763, 2n3765 v (br) ceo 40 60 vdc collector - base cutoff current v cb = 20 vdc 2n3762, 2n3764 v cb = 30 vdc 2n3763, 2n3765 v cb = 40 vdc 2n3762, 2n3764 v cb = 60 vdc 2n3763, 2n3765 i cbo 100 100 10 10 h adc m adc 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (9 78) 689 - 0803 120101 page 1 of 2 downloaded from: http:///
2n3762, l , 2n3763, l , 2n3764, 2n3765 jan series electrical characteristics (cont) characteristics symbol min. max. unit collector - emitter cutoff current v eb = 2.0 vdc, v c e = 20 vdc 2n3762, 2n3764 v eb = 2.0 vdc, v ce = 30 vdc 2n3763, 2n3765 i cex 100 100 h adc emitter - base cutoff current v eb = 2.0 vdc all types v eb = 5.0 vdc 2n3762, 2n3764 2n3763, 2n3765 i ebo 200 10 10 h adc m adc on characteristics (3) forw ard - current transfer ratio i c = 10 madc, v ce = 1.0 vdc i c = 150 madc, v ce = 1.0 vdc i c = 500 madc, v ce = 1.0 vdc i c = 1.0 adc, v ce = 1.5 vdc 2n3762, 2n3764 2n3763, 2n3765 i c = 1.5 adc, v ce = 5.0 vdc 2n3762, 2n3764 2n3763, 2n37 65 h fe 35 40 40 30 20 30 20 140 120 80 collector - emitter saturation voltage i c = 10 madc, i b = 1.0 madc i c = 150 m adc, i b = 15 madc i c = 500 madc, i b = 50 madc i c = 1.0 adc, i b = 100 madc v ce(sat) 0.1 0.22 0.5 0.9 vdc bas e - emitter saturation voltage i c = 10 madc, i b = 1.0 madc i c = 150 m adc, i b = 15 madc i c = 500 madc, i b = 50 madc i c = 1.0 adc, i b = 100 madc v be(sat) 0.9 0.8 1.0 1.2 1.4 vdc dynamic characteristics forward current transfer ratio , magnitude i c = 50 madc, v ce = 10 vdc, f = 100 mhz 2n3762, 2n3764 2n3763, 2n3765 ? h fe ? 1.8 1.5 6.0 6.0 output capacitance v cb = 10 vdc, i e = 0, 100 khz f 1.0 mhz c obo 25 pf input capacitance v eb = 0.5 vdc, i c = 0, 100 khz f 1.0 mhz c ibo 80 pf switching characteristics delay time v cc = 30 vdc, v eb = 0, t d 8.0 h s rise time i c = 1.0 madc, i b1 = 100 madc t r 35 h s storage time v cc = 30 vdc, v eb = 0, t s 80 h s fall time i c = 1.0 madc, i b1 = 100 madc t f 35 h s (3) pulse te st: pulse width = 300 m s, duty cycle 2.0%. 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 2 of 2 downloaded from: http:///
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